BASE LV.A-ESD-C
Levelling Elements
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D
d2
h
h2
h3
Max limit static load
Weight
Glass-fibre reinforced polyamide based (PA) special conductive technopolymer, black colour, matte finish.
Surface resistivity = 103 Ω (ASTM D257 measuring method).
Volume resistivity = 103 Ωcm (ASTM D257 measuring method).
Bases without no-slip disk
- LV.A-ESD-C: without ground mounting.
- LV.F-ESD-C: with two holes at 180° for ground mounting, supplied covered by a breakable plastic diaphragm (which can be easily removed by a metal tool) to avoid all unhealthy deposits of dirt and dust when the ground mounting is not required (see Fig.1).
Bases with no-slip disk assembled
NBR rubber no-slip disk, hardness 70 Shore A, supplied assembled to the base.
Surface resistivity = 103 Ω (ASTM D991 measuring method).
Volume resistivity = 103 Ωcm (ASTM D991 measuring method).
The particular assembling system of the no-slip disk to the base assures a perfect anchoring, preventing separation even in case of impact during transport or of adhesion (sticking) to the floor (see No-slip disks).
- LV.A-AS-ESD-C: without ground mounting.
- LV.F-AS-ESD-C: with two holes at 180° for ground mounting, supplied covered by a breakable plastic diaphragm (which can be easily removed by a metal tool) to avoid all unhealthy deposits of dirt and dust when the ground mounting is not required (see Fig.1).
The special conductive technopolymer (ESD-C Electrostatic Discharge Conductive) prevents the accumulation of electrostatic charge.
The bases are suitable for "ESD PROTECTED AREA" (EPA) where components, which are susceptible to electrostatic discharges, are handled.
The (ESD-C) indelibly printed mark on the surface of the levelling elements bases identifies the particular conductive features of the material according to EN 100015/1 and IEC 61340-5-1.
The special knurling under the lower lip of the base provides excellent stability and grip when using the levelling element without no-slip disk even on surfaces that are not perfectly flat.
Note
To choose the stem see Tables of the possible combinations Bases/Stems().